• October 6, 2026

  • ‍4:00 PM (CST): Topological polar textures in semiconductor oxide hetero-structures

    •  Speaker: Dr. Maxim Makeev (Department of Physics , University of Arkansas)

• Abstract

  • The two recent decades have witnessed an ever-increasing interest in understanding the

    topologically protected structures and superstructures, with both magnetic and polar textures

    being currently the focus of extensive research. The interest is driven not only by the fascinating

    physics of topological patterns but also potential applications of these structures in information

    technologies including advanced new data storage media, and energy storage devices.

    I will start the talk by providing a historical background on the topological states of matter including

    basis and genesis.This will be followed by an overview of topological textures arising in

    condensed-matter material systems. While there exists a plethora of topological structures in

    various magnetic and polar material systems, I will restrict further attention primarily to polar

    textures in semiconductor oxide hereto-structures. The role and importance of atomistic

    simulation and quantum calculation methods to the studies of topological structures and patterns

    will be discussed next. The emphasis will be put on use of first-principles-based simulations

    methods to understanding topological structure and superstructure formation. Specifically, an

    overview of selected recent studies of dynamical behavior underlying the formation of topological

    patterns in semiconductor oxide hereto-structures will be given. In addition, a controllable

    manipulation of the properties of such patterns via external stimuli will be discussed. Finally, I will

    touch upon the issues related to possible use of these topological structures and/or

    superstructures for potential technological applications.