October 20, 2026

• 4:00 PM (CST): van Hove singularity engineering via homo- and hetero-strain in twisted bilayer graphene

  • Speaker: Dinesh Kumar Yadav (Department of Physics and Astronomy, University of Utah)

  • Abstract

    • Researchers are increasingly exploring moiré materials because of their fascinating properties.

      However, their remarkable flexibility raises questions about how these materials react to

      mechanical strain, particularly because inherent strain during fabrication can lead to variations

      between samples. To address this, we have developed a method to fabricate samples on flexible

      substrates and apply homo-strain by displacing them out of plane. We can apply this strain to

      single-layer graphene Landau levels up to several percent, as a result of which the Fermi velocity

      changes. By carefully calibrating the strain, we can manipulate the Hofstadter butterfly in twisted

      bilayer graphene (TBG) samples away from the magic angle. Wang et al. showed that uniaxial

      hetero-strain arising during sample fabrication splits the otherwise degenerate van Hove

      singularity (vHS) of TBG into three. In our samples, we study the behavior of the three vHS in

      TBG with applied isotropic strain. We find non-intuitive shifts in the energy of the three vHS with

      strain, suggesting that the main effect of our applied homo-strain in these samples is to rotate the

      axis of the hetero-strain. Our work helps elucidate the variability in moiré materials and methods

      to ameliorate it

• 4:30 PM (CST): Spectrally resolved imaging of exciton and biexciton diffusion in monolayer WSe2

  • Speaker: Sheikh Parvez (Department of Physics, Montana State University)

October 6, 2026

• ‍4:00 PM (CST): Topological polar textures in semiconductor oxide hetero-structures

  •  Speaker: Dr. Maxim Makeev (Department of Physics , University of Arkansas)

Abstract

• The two recent decades have witnessed an ever-increasing interest in understanding the

  topologically protected structures and superstructures, with both magnetic and polar textures

  being currently the focus of extensive research. The interest is driven not only by the fascinating

  physics of topological patterns but also potential applications of these structures in information

  technologies including advanced new data storage media, and energy storage devices.

  I will start the talk by providing a historical background on the topological states of matter including

  basis and genesis.This will be followed by an overview of topological textures arising in

  condensed-matter material systems. While there exists a plethora of topological structures in

  various magnetic and polar material systems, I will restrict further attention primarily to polar

  textures in semiconductor oxide hereto-structures. The role and importance of atomistic

  simulation and quantum calculation methods to the studies of topological structures and patterns

  will be discussed next. The emphasis will be put on use of first-principles-based simulations

  methods to understanding topological structure and superstructure formation. Specifically, an

  overview of selected recent studies of dynamical behavior underlying the formation of topological

  patterns in semiconductor oxide hereto-structures will be given. In addition, a controllable

  manipulation of the properties of such patterns via external stimuli will be discussed. Finally, I will

  touch upon the issues related to possible use of these topological structures and/or

  superstructures for potential technological applications.

September 8, 2026

• 4:00 PM (CST): Optically Detected Magnetic Resonance of Boron Vacancy Spin Defects in Hexagonal Boron Nitride

  • Speaker: Antonio Cobarrubia (Department of Physics and Computational Science Research Center, San Diego State University)

  • Abstract

    • Optically active defects in hexagonal boron nitride (hBN) are emerging quantum platforms due to their

      room-temperature operation, high single-photon purity, spin-photon interfaces, and compatibility with

      cavity-enhanced light–matter interactions. Among these defects, the negatively charged boron vacancy

      center, (VB−), is particularly promising because it hosts a stable spin-1 ground state that can be optically

      initialized and read out. In this work, we present experimental and computational efforts to characterize and

      enhance quantum emission from (VB−) defects in hBN. Using a confocal microscopy platform integrated

      with microwave control and advanced timing electronics, we probe spin-dependent photoluminescence

      through optically detected magnetic resonance (ODMR). These measurements reveal the spin transition

      signatures of (VB−) centers and provide insight into strategies for improving optical brightness and spin

      contrast. Understanding and controlling these spin-photon interfaces is an important step toward developing

      scalable hBN-based quantum sensors and integrated quantum photonic technologies.

• 4:30 PM (CST): QUACOD: Quantum Optimization via Coordinate Descent for Scalable Drone Scheduling

  • Speaker: Van Quang Huy Nguyen (Department of Electrical Engineering and Computer Science, University of Arkansas)

August 25, 2026

• ‍4:00 PM (CST): Spin-Dependent Transport and Resistive Switching in CuCrP2S6-Based Tunnel Junctions

  • Speaker: Dr. Khimananda Acharya (Department of Physics, South Dakota School of Mines and Technology)

  • Abstract

    • CuCrP2S6 (CCPS), a two-dimensional van der Waals multiferroic material, provides a promising

      platform for electrically tunable multistate non-volatile memory devices due to the coexistence of

      switchable ferroelectricity and layered magnetism. In this work, we performed a theoretical and

      experimental study of CCPS-based tunnel junctions. CCPS is a unique material with the

      coexistence of both ferroelectric (FE) and antiferroelectric (AFE) phases. First, an Au/CCPS/Au

      multiferroic tunnel junction is studied using density functional theory combined with

      nonequilibrium Green’s-function calculations. The AFE phase exhibits nearly ideal spin filtering,

      giant tunneling magnetoresistance (TMR) of approximately 3100%, and tunneling

      electroresistance (TER) approaching 9500% for a 4-layer CCPS device, while polarization

      switching strongly modifies the spin-dependent transport characteristics through interfacial charge

      redistribution. Second, an asymmetric Au/CCPS/Graphene vertical architecture is developed using

      a dry-transfer method on pre-patterned electrodes, allowing fast fabrication while avoiding posttransfer lithographic steps that may introduce residues or damage. The resulting ferroelectric

      memristor exhibits electrically tunable resistive switching and a record-high tunneling

      electroresistance (TER) of ~2.2×105% for comparable CCPS thickness. Density functional theory

      (DFT) calculations show that the combined effect of Au/CCPS and CCPS/Graphene interfaces

      plays a major role in producing a large difference in the potential barrier between polarization

      states and provides insight into the microscopic origins of the resistive switching behavior for AuCCCPS/Graphene device. These findings establish CCPS-based heterostructures as a versatile

      platform for multifunctional spintronic and ferroelectric memory applications.

April 21, 2026

• ‍ ‍4:00 PM (CST): Progress Toward Automated Van der Waals Heterostructure Stacking

  • Speaker: Timmy Rosno (Department of Physics, University of Arkansas)

  • Abstract

    • The manual production of heterostructure devices from two-dimensional van der Waals materials such as graphene and hexagonal boron nitride is time-consuming, inconsistent, and inconvenient to perform in inert environments that limit oxidation and hydrocarbon residue. The 2D Quantum Materials Automated Pipelines (2D-QMaPs) address these challenges through automated exfoliation, cataloging, and stacking of bulk-derived materials inside a glovebox. Metrology is performed by loading a tray of chips with exfoliated flakes onto a motorized stage with a camera and autofocus system to rapidly raster scan and process images from each location via machine learning for flake detection and classification, reducing human error and bias. This approach accelerates flake identification by up to 20x, improves consistency, and removes most false positives. Detected flakes are used to design heterostructure stacks and can be assembled by an automated stacker using thermal manipulation with a hemispherical polymethyl disulfide (PDMS) stamp and a sacrificial polycarbonate (PC) layer. Successful stacking requires near-perfect translational and rotational alignment, challenged by chip rotation within trays, thermal expansion, and the limits of conventional image processing in dynamic optical conditions. These constraints motivate machine learning approaches for image matching and real-time segmentation to generalize automated stacking.

• 4:30 PM (CST): Robotic exfoliation and heterostructure assembly using the 2D-Quantum Materials Pipelines

  • Speaker: Jane Peabody (Department of Physics and Astronomy, The University of Utah)

April 7, 2026

• 4:00 PM (CST): Direct Growth of Moiré Semiconductor Supperlattices on Hexagonal Boron Nitride

  • Speaker: Hugo Mixco (Physics Department, San Diego State University)

• 4:30 PM (CST): Predicting Properties of Functionalized Janus TMD Nanoribbons: Corrections and New Understandings

  • Speaker: M Wittkop (Department of Chemistry & Biochemistry, Montana State University)

March 24, 2026

• 4:00 PM (CST): Charge Density Waves in Thin Crystallites of K_0.3_Mo_O_3

  • Speaker: Patrick White (Physics Department, Montana State University)

• ‍ ‍4:30 PM (CST): Characterization of Room Temperature Single Phonton Emitters in hBN: an Ab-Initio Approach

  • Speaker: Christopher Patino(Physics Department, San Diego State University)

March 3, 2026

• 4:00 PM (CST): Photoluminescence characterization of 2D semiconductor nanoribbons

  • Speaker: Sam Wyss (Physics Department, Montana State University)

• 4:30 PM (CST): Dominance of deformation potential in the photostriction of layered ferroelectrics

  • Speaker: Sudeep Puri (Physics Department, University of Arkansas)

February 17, 2026

• 4:00 PM (CST): Ferromagnetism in van der Waals Antiferromagnet Via Anisotropy Engineering

  • Speaker: Dinesh Upreti (Physics Department, University of Arkansas)

• 4:30 PM (CST): A MEMS Cantilever for the Strain Tuning of 2D Materials in Cryogenic Conditions

  • Speaker: Nikolas Torgerson (Electrical and Computer Engineering, Montana State University)

February 3, 2026

• 4:00 PM (CST): Dynamics of Polar Vortex Crystallization in Ultrathin Ferroelectric Films

  • Speaker: Dr. Suyash Rijal (University of Arkansas)

  • Abstract

    • Polar vortex crystals are periodically ordered vortex structures with alternating vorticity that

      emerge in ferroelectric thin films and superlattices at room temperature. These topological states

      arise from a delicate balance among electrostatic, elastic, and gradient energies and are known to

      be highly tunable through external control parameters. Polar vortex crystals exhibit a range of

      intriguing properties, including collective excitations and strong coupling to light, making them

      promising candidates for functional applications. Although collective vortex motion under

      external stimuli has been demonstrated, the dynamical origin of polar vortex formation remained

      unresolved. Using ab initio–based effective Hamiltonian simulations, vortex crystallization is shown to

      originate from the softening of a phonon mode and can be described as a Z2 × SU(1) symmetrybreaking transition from a vortex-liquid-like state to an ordered vortex crystal. In addition, resonant

      switching of the vortex crystal orientation driven by mid-infrared laser excitation is predicted

      through the activation of collective modes. These results clarify the dynamical nature of polar

      vortices and establish connections with other modulated states of matter, such as spin spirals in

      magnetic systems.

January 20, 2026

• 4:00 PM (CST): An Introduction to D-Wave Quantum & Quantum Annealing Computing

  • Speaker: Dr. Ken Robbins (D-Wave Quantum)

  • Abstract

    • D-Wave is one of the oldest quantum computing companies still operating today and has carved

      out a unique niche in the market with their take on analog quantum computing. We’ll go into the

      basics of their technology and the types of use cases that work best with their machines.

September 23, 2026

• 4:00 PM (CST): Wafer-Scale Synthesis of Hexagonal Boron Nitride with Built-In Single Photon Emitters

• Speaker: Dr. Choudhury Abinash Bhuyan (Department of Physics, San Diego State University)

• Abstract

  • Quantum photonic technologies operating at room temperature require stable single-photon

    sources that can be seamlessly integrated on-chip. Two-dimensional materials such as hexagonal

    boron nitride (hBN) are promising hosts for these sources, but achieving wafer-scale growth of

    hBN with built-in single-photon sources on CMOS-compatible substrates has remained elusive.

    Here we demonstrate the direct synthesis of uniform, wafer-scale (3-inch) multilayer hBN films

    on SiO₂/Si substrates via moderate-pressure chemical vapor deposition, producing continuous

    coatings with in-situ single-photon emitters. The native defect centers in these films exhibit bright

    visible photoluminescence with zero-phonon lines at ~540–600 nm and room-temperature photon

    antibunching (g(2)(0)<0.5). These single photon sources show exceptional spectral purity (Debye–

    Waller factors up to ~0.92), robust photostability, and strongly polarized emission (∼90%

    polarization visibility). Post-growth thermal annealing of hBN films further enhances the spectral

    stability and emission purity. By providing on-chip quantum light sources in a scalable platform

    compatible with standard CMOS processing, this work aims to integrate single-photon emitters

    into photonic circuits for quantum information processing and quantum-enhanced sensing.