• September 23, 2026

  • 4:00 PM (CST): Wafer-Scale Synthesis of Hexagonal Boron Nitride with Built-In Single Photon Emitters

  • Speaker: Dr. Choudhury Abinash Bhuyan (Department of Physics, San Diego State University)

  • Abstract

    • Quantum photonic technologies operating at room temperature require stable single-photon

      sources that can be seamlessly integrated on-chip. Two-dimensional materials such as hexagonal

      boron nitride (hBN) are promising hosts for these sources, but achieving wafer-scale growth of

      hBN with built-in single-photon sources on CMOS-compatible substrates has remained elusive.

      Here we demonstrate the direct synthesis of uniform, wafer-scale (3-inch) multilayer hBN films

      on SiO₂/Si substrates via moderate-pressure chemical vapor deposition, producing continuous

      coatings with in-situ single-photon emitters. The native defect centers in these films exhibit bright

      visible photoluminescence with zero-phonon lines at ~540–600 nm and room-temperature photon

      antibunching (g(2)(0)<0.5). These single photon sources show exceptional spectral purity (Debye–

      Waller factors up to ~0.92), robust photostability, and strongly polarized emission (∼90%

      polarization visibility). Post-growth thermal annealing of hBN films further enhances the spectral

      stability and emission purity. By providing on-chip quantum light sources in a scalable platform

      compatible with standard CMOS processing, this work aims to integrate single-photon emitters

      into photonic circuits for quantum information processing and quantum-enhanced sensing.